PART |
Description |
Maker |
W39V040A W39V040AQ W39V040AP |
3.3-Volt Flash NVM > Flash> FWH/LPC Flash Memory 512K 】 8 CMOS FLASH MEMORY WITH LPC INTERFACE
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Winbond Electronics WINBOND[Winbond]
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W39V040FA W39V040FAT W39V040FAP W39V040FAQ |
3.3-Volt Flash NVM > Flash> FWH/LPC Flash Memory 512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE
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Winbond Electronics WINBOND[Winbond]
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W27E040 W27E040-90 M27E040 |
NVM > EPROM IC,EEPROM,512KX8,DIP,32PIN,PLASTIC FLASH MEMORY From old datasheet system
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Winbond Electronics Corp
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LE25FW808 |
8M-bit (1024K×8) Serial Flash Memory with High-Density Read Mode 8M-bit (1024K隆驴8) Serial Flash Memory with High-Density Read Mode
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Sanyo Semicon Device
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STM32F101RDT6XXX STM32F101ZET6TR |
High-density access line, ARM-based 32-bit MCU with 256 to 512 KB Flash, 9 timers, 1 ADC and 10 communication interfaces 32-BIT, FLASH, 36 MHz, RISC MICROCONTROLLER, PQFP144
|
STMicroelectronics
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ATF22V10 ATF22V10B ATF22V10B-10JC ATF22V10B-10JI A |
High- Performance EE PLD FLASH PLD, 25 ns, PDSO24 High- Performance EE PLD FLASH PLD, 25 ns, PDIP24 Single Supply, Dual SPST Switch FLASH PLD, 15 ns, PDIP24 High- Performance EE PLD FLASH PLD, 15 ns, PDIP24 High- Performance EE PLD FLASH PLD, 15 ns, PDSO24 High- Performance EE PLD FLASH PLD, 10 ns, PDIP24 High- Performance EE PLD FLASH PLD, 15 ns, PQCC28 High- Performance EE PLD FLASH PLD, 10 ns, CQCC28 High- Performance EE PLD FLASH PLD, 15 ns, CDIP24 High- Performance EE PLD FLASH PLD, 7.5 ns, PDIP24 High- Performance EE PLD FLASH PLD, 7.5 ns, PDSO24 High- Performance EE PLD FLASH PLD, 10 ns, PDSO24 3.3V, 1 Output, LVTTL to LVPECL Clock Converter CAP 470PF 16V 5% X7R SMD-0603 TR-7 PLATED-NI/SN High-performance EE PLD
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation] http://
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SET111411 SET111403 SET111412 SET111419 SET111404 |
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?400V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??) High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?1000V,娓╁害55???骞冲??存??垫?30A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??) 3 PHASE, 30 A, SILICON, BRIDGE RECTIFIER DIODE High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?150V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴??涓???ㄦ尝妗ユ?娴??) High Density,High Current,3-Phase Full Wave Bridge Rectifier(反向电压1000V,温度55℃时平均整流电流45A,高密大电三相全波桥整流器) 高密度,大电3 -相全波桥式整流器(反向电000V的温5℃时平均整流电流45A条,高密度,大电流,三相全波桥整流器 HIGH CURRENT, 3-PHASE FULL WAVE BRIDGE ASSEMBLY
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Semtech, Corp. Semtech Corporation
|
ISPLSI2032VL-135LT44I ISPLSI2096VL ISPLSI2096VL-10 |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD 2.5V In-System Programmable SuperFAST⑩ High Density PLD 2.5V In-System Programmable SuperFAST High Density PLD 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 8 ns, PQFP128 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP44
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LATTICE[Lattice Semiconductor] LATTICE [Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
ATV2500H ATV2500H-25DC ATV2500H-25DI ATV2500H-25DM |
120 OHM 1% 1/8 W High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CDIP40 High-Density UV-Erasable Programmable Logic Device OT PLD, 35 ns, PQCC44 High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CQCC44 High-Density UV-Erasable Programmable Logic Device OT PLD, 30 ns, PDIP40 High-Density UV-Erasable Programmable Logic Device UV PLD, 30 ns, CQCC44
|
ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
|
HDRIGHTANGLE 781-M15-113R141 781-M15-113R001 781-M |
MALE-HIGH DENSITY MALE-HIGH DENSITY-MACHINED CONTACTS-RIGHT ANGLE
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List of Unclassifed Manufacturers
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SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6 |
High Voltage,High Current,High Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存??? 5.5 A, 16000 V, SILICON, RECTIFIER DIODE High Voltage,High Current,High Density Standard Recovery Rectifier(反向电压6000V,温5℃时平均整流电流5.5A,高压,大电流,高密度,标准恢复整流 STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER
|
Semtech Corporation
|
STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(N沟道增强模式高密度功率MOS晶体管) N沟道增强模式“超高密度”功率MOS晶体管(不适用沟道增强模式高密度功率马鞍山晶体管) N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
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STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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